2D Crystals for Smart Life
Kaustav Banerjee
University of California, Santa Barbara

Sept. 16, 2016, 1 p.m.


The experimental demonstration of graphene in 2004 has opened up a window to the two-dimensional (2D) world of materials. This has subsequently triggered a surge of research activities on various 2D crystals including single layers of hexagonal-boron nitride (h-BN), several dichalcogenides (such as MoS2 and WSe2), and complex oxides, with novel electronic properties. Atomic scale thicknesses (few Å/layer) of 2D semiconducting crystals and their controllable precise band gaps as a function of number of layers also enable the scaling of electronic devices without inducing performance variations. Moreover, seamless planar synthesis and stacking of 2D crystals on various substrates can be exploited to build novel lateral and vertical heterostructures, respectively.
This talk will highlight and discuss the prospects of such 2D crystals and their heterostructures for designing ultra-low power, low-loss, and ultra-energy-efficient active and passive devices targeted for designing next-generation green electronics needed to support the emerging paradigm of Internet of Everything. More specifically, this talk will examine the genesis of the power dissipation challenge in conventional MOSFETs, and provide an overview of the recently demonstrated 2D-channel tunneling transistor from my group (Nature, 2015) that overcomes this challenge and is a fundamentally different transistor employing several innovations. This talk will also bring forward some other applications uniquely enabled by 2D crystals, including sensors and flexible radio-frequency electronics for improving quality of life, and discuss related challenges and opportunities.



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2D Crystals for Smart Life
Kaustav Banerjee
University of California, Santa Barbara

Sept. 16, 2016, 1 p.m.


The experimental demonstration of graphene in 2004 has opened up a window to the two-dimensional (2D) world of materials. This has subsequently triggered a surge of research activities on various 2D crystals including single layers of hexagonal-boron nitride (h-BN), several dichalcogenides (such as MoS2 and WSe2), and complex oxides, with novel electronic properties. Atomic scale thicknesses (few Å/layer) of 2D semiconducting crystals and their controllable precise band gaps as a function of number of layers also enable the scaling of electronic devices without inducing performance variations. Moreover, seamless planar synthesis and stacking of 2D crystals on various substrates can be exploited to build novel lateral and vertical heterostructures, respectively.
This talk will highlight and discuss the prospects of such 2D crystals and their heterostructures for designing ultra-low power, low-loss, and ultra-energy-efficient active and passive devices targeted for designing next-generation green electronics needed to support the emerging paradigm of Internet of Everything. More specifically, this talk will examine the genesis of the power dissipation challenge in conventional MOSFETs, and provide an overview of the recently demonstrated 2D-channel tunneling transistor from my group (Nature, 2015) that overcomes this challenge and is a fundamentally different transistor employing several innovations. This talk will also bring forward some other applications uniquely enabled by 2D crystals, including sensors and flexible radio-frequency electronics for improving quality of life, and discuss related challenges and opportunities.



Share