Galliumnitride's wide band gap of 3.4 eV paved the way for GaN-based devices in optoelectronic and high-power/high-frequency applications. Even if the commercial success was stunning only little was known about the fundamental physical properties of the underlying heterostructures and the ultimate role of the substrate selection. Within the last decade careful studies of molecular beam epitaxy growth conditions lead to 2-dimensional electron gases exceeding low-temperature mobilities of 10e5cm2/Vs. The talk summarizes these developments with particular attention paid to spin-orbit coupling and quantum transport within the quantum Hall regime.
Galliumnitride's wide band gap of 3.4 eV paved the way for GaN-based devices in optoelectronic and high-power/high-frequency applications. Even if the commercial success was stunning only little was known about the fundamental physical properties of the underlying heterostructures and the ultimate role of the substrate selection. Within the last decade careful studies of molecular beam epitaxy growth conditions lead to 2-dimensional electron gases exceeding low-temperature mobilities of 10e5cm2/Vs. The talk summarizes these developments with particular attention paid to spin-orbit coupling and quantum transport within the quantum Hall regime.
