Understanding adsorption of Si at GaN (0001) surfaces using first-principles calculations
Andreia Luisa da Rosa
Fritz-Haber-Institut der Max-Planck Gesellschaft

Nov. 22, 2002, 11 a.m.


Silicon is the most common impurity used as n-type dopant in



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Understanding adsorption of Si at GaN (0001) surfaces using first-principles calculations
Andreia Luisa da Rosa
Fritz-Haber-Institut der Max-Planck Gesellschaft

Nov. 22, 2002, 11 a.m.


Silicon is the most common impurity used as n-type dopant in



Share